ID :
195496
Mon, 07/18/2011 - 07:34
Auther :
Shortlink :
https://oananews.org//node/195496
The shortlink copeid
Chipmakers wage battle to lead next-generation memory chip market
SEOUL, July 18 (Yonhap) -- Global semiconductor companies are scurrying to win the high-stakes race to develop the future generation of memory chips, as profits from existing dynamic random access memory (DRAM) chips decline on weak prices, industry officials said Monday.
The fast development of the next-generation memory chips, which will upgrade existing DRAM or NAND flash memory devices while improving their weaknesses, could reshape the memory chip industry's landscape dominated by two Korean chipmakers -- Samsung Electronics Co. and Hynix Semiconductor Inc.
According to industry sources, Samsung recently developed resistance random access memory, or RRAM, which has improved durability and is equipped with a faster speed than previous memory chips. The RRAM may also offer a larger memory space.
Hynix Semiconductor, a chipmaker with memory chip and cost-cutting technologies, recently partnered with Toshiba Corp., a Japan-based chipmaker than has an edge in magnetoresistive RAM, or MRAM.
The new generation of memory chips will feature a high speed, just like existing DRAM or SRAM products. It is also possible to apply the below 10-nanometer process technology and to freely store files and pictures in the chips.
Hynix said the joint development for the future memory chips will help reduce risks by maximizing each company's strength and sharing the use of natural resources. They also plan to provide financial support for a joint production venture once the development is completed.
International Business Machines Corp. and Infineon Technologies AG have also joined hands and announced they will develop 16-mebabit MRAM.
"It is difficult to forecast when each company will start to commercialize STT-MRAM, but I expect they will start to replace DRAM and NAND flash memory three years later at the earliest or five years at the latest," said Song Myung-sub, an analyst at Hi Investment & Securities.
Samsung and other chipmakers also jumped on the bandwagon to develop Phase Change RAM, or PRAM, and Ferroelectric RAM, or FRAM.
The fast development of the next-generation memory chips, which will upgrade existing DRAM or NAND flash memory devices while improving their weaknesses, could reshape the memory chip industry's landscape dominated by two Korean chipmakers -- Samsung Electronics Co. and Hynix Semiconductor Inc.
According to industry sources, Samsung recently developed resistance random access memory, or RRAM, which has improved durability and is equipped with a faster speed than previous memory chips. The RRAM may also offer a larger memory space.
Hynix Semiconductor, a chipmaker with memory chip and cost-cutting technologies, recently partnered with Toshiba Corp., a Japan-based chipmaker than has an edge in magnetoresistive RAM, or MRAM.
The new generation of memory chips will feature a high speed, just like existing DRAM or SRAM products. It is also possible to apply the below 10-nanometer process technology and to freely store files and pictures in the chips.
Hynix said the joint development for the future memory chips will help reduce risks by maximizing each company's strength and sharing the use of natural resources. They also plan to provide financial support for a joint production venture once the development is completed.
International Business Machines Corp. and Infineon Technologies AG have also joined hands and announced they will develop 16-mebabit MRAM.
"It is difficult to forecast when each company will start to commercialize STT-MRAM, but I expect they will start to replace DRAM and NAND flash memory three years later at the earliest or five years at the latest," said Song Myung-sub, an analyst at Hi Investment & Securities.
Samsung and other chipmakers also jumped on the bandwagon to develop Phase Change RAM, or PRAM, and Ferroelectric RAM, or FRAM.
