Scientists develop new fabrication technology for compound semiconductors

By Lee Joon-seung
SEOUL, June 9 (Yonhap) -- South Korean scientists said Tuesday they have
developed a new fabrication technology used to make advanced compound
semiconductors that could help produce more energy efficient mobile devices.
The Hanyang University team led by Oh Jae-eung said it has developed a
"self-aligned dislocation annihilation" method to coat regular silicon-based
semiconductors with other materials like gallium arsenide and indium arsenide.
Such compound computer chips will offer 10 times the "switching" or reaction
speed of normal silicon-based semiconductors and use 90 percent less power,
making them ideal for use in mobile and satellite communication devices.
"The team used the new dislocation annihilation method to cheaply and
successfully 'grow' and attach various compounds over the silicon substrate,"
said Oh, who teaches computer engineering. He said that chips produced using
defect density and quantum dots had a vastly lower defect rate than those being
made at present.
"The defect rate was one-hundredth of other manufacturing processes, with the
process also having the advantages of easy fabrication and low cost," Oh said.
Foreign companies such as Motorola, AmberWave and Intel have carried out
experiments to cheaply make compound chips with low defect rates, but most have
run into technical difficulties.
The Ministry of Education, Science and Technology, which supported research and
development, said the latest fabrication method could fuel advances in
nano-complimentary metal oxide semiconductors and integrated optoelectonics
systems.
It added that the new fabrication process could also be applied to the green
information technology industry and be used to make super efficient solar fuel
cells and light emitting diodes.
The technology has been published in the latest issue of the journal
Nanotechnology with five international patents being sought.
yonngong@yna.co.kr
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